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  • Participation and Performance on Paper- and Computer-based Low-stakes Assessments 

    Nissen, Jayson M.; Jariwala, Manher; Close, Eleanor W.; Van Dusen, Ben (Springer Open, 2018-05-07)
    <p> <b>Background:</b> High-stakes assessments, such the Graduate Records Examination, have transitioned from paper to computer administration. Low-stakes research-based assessments (RBAs), such as the Force Concept ...
  • Near-Ultraviolet Micro-Raman Study of Diamond Grown on GaN 

    Nazari, Mohammad; Hancock, Bobby Logan; Anderson, J.; Savage, A.; Piner, Edwin L.; Graham, S.; Faili, F.; Oh, S.; Francis, D.; Twitchen, D.; Holtz, Mark (AIP Publishing, 2016-01-19)
    Ultraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the ...
  • Ultraviolet Micro-Raman Spectroscopy Stress Mapping of a 75-mm GaN-on-Diamond Wafer 

    Hancock, Bobby Logan; Nazari, Mohammad; Anderson, J.; Piner, Edwin L.; Faili, F.; Oh, S.; Twitchen, D.; Graham, S.; Holtz, Mark (AIP Publishing, 2016-05-23)
    Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from ...
  • Ultraviolet Micro-Raman Stress Map of Polycrystalline Diamond Grown Selectivity on Silicon Substrates Using Chemical Vapor Deposition 

    Ahmed, Raju; Nazari, Mohammad; Hancock, Bobby Logan; Simpson, J.; Engdahl, C.; Piner, Edwin L.; Holtz, Mark (AIP Publishing, 2018-05-03)
    Polycrystalline diamond stripes, with a nominal thickness of ∼1.5 μm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping ...
  • Challenges of Contact Module Integration for GaN-based Devices in a Si-CMOS Environment 

    Johnson, Derek W.; Ravikirthi, Pradhyumna; Suh, Jae Woo; Lee, Rinus T. P.; Hill, Richard J. W.; Wong, Man Hoi; Piner, Edwin L.; Harris, Harlan Rusty (AIP Publishing, 2014-05-23)
    The authors report on the integration of an Au-free contact module intended for AlGaN/GaN high-electron-mobility transistors fabricated in a 200 mm Si complementary metal–oxide–semiconductor facility. Contacts are characterized ...
  • Becoming Physics People: Development of Integrated Physics Identity through the Learning Assistant Experience 

    Close, Eleanor W.; Conn, Jessica; Close, Hunter G. (American Physical Society, 2016-02-22)
    [This paper is part of the Focused Collection on Preparing and Supporting University Physics Educators.] In this study, we analyze the experience of students in the Physics Learning Assistant (LA) program at Texas State ...
  • Energy Tracking Diagrams 

    Scherr, Rachel E.; Harrer, Benedikt W.; Close, Hunter G.; Daane, Abigail R.; DeWater, Lezlie S.; Robertson, Amy D.; Seeley, Lane; Vokos, Stamatis (American Association of Physics Teachers, 2016-02-01)
    Energy is a crosscutting concept in science and features prominently in national science education documents. In the Next Generation Science Standards, the primary conceptual learning goal is for learners to conserve energy ...
  • Geometric Reasoning about Damped and Forced Harmonic Motion in the Complex Plane 

    Close, Hunter G. (American Association of Physics Teachers, 2015-09-01)
    Complex-valued functions are commonly used to solve differential equations for one-dimensional motion of a harmonic oscillator with linear damping, a sinusoidal driving force, or both. However, the usual approach treats ...
  • Ge Quantum Dots Encapsulated by AIAs Grown by Molecular Beam Epitaxy on GaAs without Extended Defects 

    Qi, Meng; Stephenson, Chad A.; Protasenko, Vladimir; O'Brien, William A.; Mintairov, Alexander; Xing, Huili Grace; Wistey, Mark A. (AIP Publishing, 2014-02-21)
    We demonstrate nearly spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy. The QDs were formed without a wetting layer using a high ...
  • Density Functional Theory + U Modeling of Polarons in Organohalide Lead Perovskites 

    Welch, Eric; Scolfaro, Luisa M.; Zakhidov, Alex (AIP Publishing, 2016-12-16)
    We investigate the possible formation of polarons in four organic perovskites (CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, and CH3NH3PbI2Cl1) using a density functional theory (DFT) calculations with local potentials and hybrid ...
  • Electronic and Optical Properties of Antiferromagnetic Iron Doped NiO - A First Principles Study 

    Petersen, John E.; Twaglrayezu, Fidele; Scolfaro, Luisa M.; Borges, Pablo D.; Geerts, Wilhelmus J. (AIP Publishing, 2017-02-06)
    Antiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to ...
  • Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides 

    Qi, Meng; O'Brien, William A.; Stephenson, Chad A.; Patel, Victor; Cao, Ning; Thibeault, Brian J.; Schowalter, Marco; Rosenauer, Andreas; Protasenko, Vladimir; Xing, Huili Grace; Wistey, Mark A. (MDPI, 2017-03-26)
    Tensile-strained Ge is a possible laser material for Si integrated circuits, but reports of lasers using tensile Ge show high threshold current densities and short lifetimes. To study the origins of these shortcomings, Ge ...
  • Fast Detection and Low Power Hydrogen Sensor Using Edge-Oriented Vertically Aligned 3-D Network of MoS2 Flakes at Room Temperature 

    Agrawal, A. V.; Kumar, R.; Venkatesan, S.; Zakhidov, Alex; Zhu, Z.; Bao, Jiming; Kumar, Mahesh; Kumar, Mukesh (AIP Publishing, 2017-08-29)
    The increased usage of hydrogen as a next generation clean fuel strongly demands the parallel development of room temperature and low power hydrogen sensors for their safety operation. In this work, we report strong evidence ...
  • Control of InGaAs and InAs Facets Using Metal Modulation Epitaxy 

    Wistey, Mark A.; Baraskar, Ashish K.; Singisetti, Uttam; Burek, Greg J.; Shin, Byungha; Kim, Eunji; McIntyre, Paul C.; Gossard, Arthur C.; Rodwell, Mark J. W. (American Vacuum Society, 2015-01-06)
    Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy ...
  • Electronic and Thermoelectric Properties of InN Studied Using ab initio Density Functional Theory and Boltzmann Transport Calculations 

    Borges, Pablo D.; Scolfaro, Luisa M. (AIP Publishing, 2014-12-11)
    The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport ...
  • Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys 

    Stephenson, Chad A.; Gillett-Kunnath, Miriam; O'Brien, William A.; Kudrawiec, Robert; Wistey, Mark A. (MDPI, 2016-12-02)
    Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, ...
  • A Computer Program for Prediction of Tides 

    Doescher, Russell L. (1992-04)
    No abstract prepared.
  • Athermal annealing of phosphorus-ion-implanted silicon 

    Grun, J.; Fischer, R. P.; Peckerar, M.; Felix, C. L.; Covington, Billy C.; DeSisto, W. J.; Donnelly, David W.; Ting, A.; Manka, C. K. (American Institute of Physics, 2000-09-25)
    A 1 cm2 area in phosphorus-implanted silicon samples in annealed by irradiation of a much smaller 0.002 cm2 area with a single laser pulse. Resistivity of the annealed region is uniform and similar to that measured after ...
  • Athermal annealing of low-energy boron implants in silicon 

    Donnelly, David W.; Covington, Billy C.; Grun, J.; Fischer, R.P.; Peckerar, M.; Felix, C. L. (American Institute of Physics, 2001-04-02)
    Silicon samples that have been ion implanted with boron at energies below 3 keV have been athermally annealed. The annealing process has been characterized using secondary ion mass spectrometry and infrared absorption ...
  • Synthesis, Characterization, and Investigation of a Conformationally Immobile Calix[6]arene as a Negative Electron Beam Resist 

    Monreal, Gabriel H.; Staggs, Sara J.; Blanda, Michael T.; Geerts, Wilhelmus J.; Galloway, Heather; Spencer, Gregory F. (American Institute of Physics, 2005-09-14)
    Calixarenes of a variety of molecular weights and with several different functional attachments have been studied as high resolution, high contrast negative electron beam resists. In this article, results are presented for ...

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