Growth and characterization of novel GaN high electron mobility transistor structures with enhanced two-dimensional electron gas

Date

2016-12

Authors

Simpson, Jeffrey R.

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Abstract

Novel gallium nitride based high electron mobility transistor structures were grown using metalorganic chemical vapor deposition. Traditional GaN based HEMT structures incorporate a version of an aluminum gallium nitride / gallium nitride single crystalline heterointerface for generation of a conductive two-dimensional electron gas. The grown structures aim to enhance the properties of their two-dimensional electron gases beyond commercially available designs. Novel material alterations to the traditional HEMT structures have established a new materials platform for this technology. Growth and characterization of these novel materials are presented.

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Keywords

MOCVD, HEMT, GaN

Citation

Simpson, J. R. (2016). <i>Growth and characterization of novel GaN high electron mobility transistor structures with enhanced two-dimensional electron gas</i> (Unpublished dissertation). Texas State University, San Marcos, Texas.

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