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dc.contributor.advisorGolding, Terry
dc.contributor.authorYust, Brianen_US
dc.date.accessioned2012-02-24T10:20:27Z
dc.date.available2012-02-24T10:20:27Z
dc.date.issued2008-05-01en_US
dc.date.submittedMay 2008
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/4011
dc.description.abstractIn this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices.en_US
dc.formatText
dc.format.extent90 pages
dc.format.medium1 file (.pdf)
dc.language.isoen_US
dc.subjectMosfetsen_US
dc.subjectHigh-k Dialectricen_US
dc.subjectBreakdownen_US
dc.subjectCharge pumpingen_US
dc.subject.classificationPhysicsen_US
dc.titleThe Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectricen_US
txstate.documenttypeThesis
dc.contributor.committeeMemberVentrice, Carl
dc.contributor.committeeMemberSpencer, Gregory
thesis.degree.departmentPhysics
thesis.degree.disciplinePhysics
thesis.degree.grantorTexas State University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science


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