Temperature Programmed Desorption of Graphene Oxide Under Ultra-High Vacuum
Abstract
Graphene oxide is an electrical insulator that shows potential
for use in nanoscale electronic devices. An understanding of the
thermal stability of graphene oxide sheets is important since the
electrical, chemical, and mechanical properties of graphene oxide
will change as it is reduced at elevated temperatures. In this
study, graphene oxide films were grown by deposition of an aqueous
solution of graphene oxide onto oxygen plasma cleaned silicon
nitride on silicon substrates. The thermal stability of these films
was studied by temperature programmed desorption under ultra-high vacuum conditions. The primary decomposition components of the
films are H2O, CO2, and CO.