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dc.contributor.authorGrun, J. ( )en_US
dc.contributor.authorManka, C. K. ( )en_US
dc.contributor.authorHoffman, Carl A. ( )en_US
dc.contributor.authorMeyer, J. R. ( )en_US
dc.contributor.authorGlembocki, O. J. ( )en_US
dc.contributor.authorKaplan, R. ( )en_US
dc.contributor.authorQadri, S. B. ( )en_US
dc.contributor.authorSkelton, E F. ( )en_US
dc.contributor.authorDonnelly, David W. ( )en_US
dc.contributor.authorCovington, Billy C. ( )en_US
dc.date.accessioned2010-06-02T10:21:02Z
dc.date.available2012-02-24T10:20:47Z
dc.date.issued1997-02-24en_US
dc.identifier.citationGrun, J., Manka, C. K., Hoffman, C. A., Meyer, J. R., Glembocki, O. J., Kaplan, R., Qadri, S. B., Skelton, E. F., Donnelly, D., & Covington, B. (1997). Athermal annealing of silicon. Physical Review Letters, 78(8), pp. 1584-1587.
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/4030
dc.description.abstractWe demonstrate a new mechanism for annealing silicon that does not involve the direct application of heat as in conventional thermal annealing or pulsed laser annealing. A laser pulse focused to high power on a small surface spot of a neutron-transmutation-doped silicon slab is shown to anneal regions far outside the illuminated spot where no heat was directly deposited. Electrical activation of donors throughout the slab was uniform and comparable to that of thermally annealed control samples. We conjecture that the annealing was caused by mechanical energy introduced by the laser pulse. This new method may provide a viable alternative for annealing semiconductors or other materials.en_US
dc.formatText
dc.format.extent4 pages
dc.format.medium1 file (.pdf)
dc.language.isoen_US
dc.publisherAmerican Physical Society
dc.sourcePhysical Review Letters, 1997, Vol. 78, No. 8, pp. 1584-1587.
dc.subjectSiliconen_US
dc.subjectAnnealing siliconen_US
dc.subjectAlternative annealing techniquesen_US
dc.subject.classificationPhysicsen_US
dc.titleAthermal Annealing of Siliconen_US
txstate.documenttypeArticle
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.78.1584
txstate.departmentPhysics


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