Far-infrared Spectroscopic, Magnetotransport, and X-ray Study of Athermal Annealing in Neutron-transmutation-doped Silicon

Donnelly, David W.; Covington, Billy C.; Grun, J.; Hoffman, Carl A.; Meyer, J. R.; Manka, C. K.; Glembocki, O. J.; Qadri, S. B.; Skelton, E. F.

Date

1997-08

Author

Donnelly, David W.

Covington, Billy C.

Grun, J.

Hoffman, Carl A.

Meyer, J. R.

Manka, C. K.

Glembocki, O. J.

Qadri, S. B.

Skelton, E. F.

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Abstract

We present evidence that the energy introduced by a short laser pulse focused to high intensity on a small spot on the surface of neutron-transmutation-doped silicon electrically activates impurities far away from the focal spot. The activation of the impurities is measured by far-infrared spectroscopy of shallow donor levels and by magnetotransport characterization. Electrical activity is comparable to that obtained with conventional thermal annealing. X-ray rocking curve measurements show strain in the area of the focal spot, but none at large distances from the focal spot.

Citation

Donnelly, D. W., Covington, B. C., Grun, J., Hoffman, C. A., Meyer, J. R., Manka, C. K., Glembocki, O., Qadri, S. B., & Skelton, E. F. (1997). Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon. Journal of Applied Physics, 71(5), pp. 680-682.