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dc.contributor.authorDonnelly, David W. ( )en_US
dc.contributor.authorCovington, Billy C. ( )en_US
dc.contributor.authorGrun, J. ( )en_US
dc.contributor.authorHoffman, Carl A. ( )en_US
dc.contributor.authorMeyer, J. R. ( )en_US
dc.contributor.authorManka, C. K. ( )en_US
dc.contributor.authorGlembocki, O. J. ( )en_US
dc.contributor.authorQadri, S. B. ( )en_US
dc.contributor.authorSkelton, E. F. ( )en_US
dc.date.accessioned2010-06-02T10:21:02Z
dc.date.available2012-02-24T10:21:03Z
dc.date.issued1997-08en_US
dc.identifier.citationDonnelly, D. W., Covington, B. C., Grun, J., Hoffman, C. A., Meyer, J. R., Manka, C. K., Glembocki, O., Qadri, S. B., & Skelton, E. F. (1997). Far-infrared spectroscopic, magnetotransport, and x-ray study of athermal annealing in neutron-transmutation-doped silicon. Journal of Applied Physics, 71(5), pp. 680-682.
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/4049
dc.description.abstractWe present evidence that the energy introduced by a short laser pulse focused to high intensity on a small spot on the surface of neutron-transmutation-doped silicon electrically activates impurities far away from the focal spot. The activation of the impurities is measured by far-infrared spectroscopy of shallow donor levels and by magnetotransport characterization. Electrical activity is comparable to that obtained with conventional thermal annealing. X-ray rocking curve measurements show strain in the area of the focal spot, but none at large distances from the focal spot.en_US
dc.formatText
dc.format.extent3 pages
dc.format.medium1 file (.pdf)
dc.language.isoen_US
dc.publisherAmerican Institute of Physics
dc.sourceJournal of Applied Physics, August 1997, Vol. 71, No. 5, pp. 680-682.
dc.subjectFar-infrareden_US
dc.subjectSpectroscopyen_US
dc.subjectMagnetotransporten_US
dc.subjectX-rayen_US
dc.subjectAthermal annealingen_US
dc.subjectNeutron-transmutation-dopeden_US
dc.subjectSiliconen_US
dc.subject.classificationPhysicsen_US
dc.titleFar-infrared Spectroscopic, Magnetotransport, and X-ray Study of Athermal Annealing in Neutron-transmutation-doped Siliconen_US
txstate.documenttypeArticle
dc.identifier.doihttps://doi.org/10.1063/1.119828
txstate.departmentPhysics


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