Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon
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The continued scaling of Si CMOS devices as had been practiced by the electronics industry has reached the point where, alternative solutions to the conventional MOSFET device need to be found. There is widespread consensus that high mobility III-V channel materials with their high electron mobilities and velocities will enable increased performance and reduced power consumption at scaled geometries. While the industry is currently targeting the 11 nm technology node for their introduction, there are significant challenges remaining before high mobility materials can be adopted for high volume manufacturing (HVM). One of the requirements is that these materials need to be epitaxially integrated onto silicon and be able to withstand the processing environment in the various CMOS modules. The challenge is to characterize and eventually to minimize the defects in these heterostructures when grown on silicon substrates due to the differences in lattice constants. Characterization of these structures is necessary to determine whether there are any roadblocks to device operation. In this thesis, the electrical characterization of MBE grown III-V InGaAs/InAlAs heterostructures on silicon and native InP substrates using variable field Hall measurements at temperatures ranging from 10K-room temperature in magnetic fields from 0-9T will be presented. From these measurements, Quantitative Mobility Spectrum Analysis (QMSA) of the data is carried out to determine the densities and mobilities of the carriers and the effect of epitaxial defects on channel transport and buffer leakage. This data is then used for growth optimization to be able to develop material structures suitable for HVM of CMOS at the 11nm node and beyond.