Attenuated Total Reflectance – Fourier Transform Infrared Spectroscopy Analysis of Pulsed Electron Deposited Silicon Dioxide Film on Silicon Substrate
Date
2010-08
Authors
Ferguson, Patrick P.
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Abstract
Four peaks in the Infrared (IR) spectral region of 1300 cm-1 – 1000 cm-1 were isolated for 13 sample spectra. The 1300 cm-1 – 1000 cm-1 region corresponds to the asymmetric stretching modes of the SiO2 crystal. The four peaks were compared based on their amplitudes, positions, and full width at half maximums. The comparisons were made in an effort to identify the ideal Pulsed Electron Deposition (PED) conditions and also to compare the PED method to another method, Electron Beam (E-Beam) deposition. The E-Beam deposition samples had stronger absorbence than the PED samples for all four peaks. This study found that the ideal growth temperature for PED of silicon dioxide is 850 °C which was the highest of all the growth temperatures. Also, the thickest samples,
about 500 nm films, had the best IR characteristics. The Si substrate orientation also affected the SiO2 film. The {100} substrate orientation preformed worse than the {111} orientation.
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Keywords
ATR, Attenuated, Thin film, SiO2, Silicon dioxide, Fourier, FTIR, Attenuation (Physics), Silica, Fourier transform infrared spectroscopy
Citation
Ferguson, P. (2010). <i>Attenuated total reflectance – Fourier transform infrared spectroscopy analysis of pulsed electron deposited silicon dioxide film on silicon substrate</i> (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.