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dc.contributor.authorGrun, J. ( )
dc.contributor.authorFischer, R. P. ( )
dc.contributor.authorPeckerar, M. ( )
dc.contributor.authorFelix, C. L. ( )
dc.contributor.authorCovington, Billy C. ( )
dc.contributor.authorDeSisto, W. J. ( )
dc.contributor.authorDonnelly, David W. ( )
dc.contributor.authorTing, A. ( )
dc.contributor.authorManka, C. K. ( )
dc.date.accessioned2013-07-19T15:59:26Z
dc.date.available2013-07-19T15:59:26Z
dc.date.issued2000-09-25
dc.identifier.citationGrun, J., Fischer, R. P., Peckerar, M., Felix, C. L., Covington, B. C., DeSisto, W. J., Donnelly, D. W., Ting, A., & Manka, C. K. (2000). Athermal annealing of phosphorus-ion-implanted silicon. Applied Physics Letters, 77(13), pp. 1997-1999.
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/4674
dc.description.abstractA 1 cm2 area in phosphorus-implanted silicon samples in annealed by irradiation of a much smaller 0.002 cm2 area with a single laser pulse. Resistivity of the annealed region is uniform and similar to that measured after thermal annealing. Electrically activated donors did not diffuse into the sample and only slightly towards the sample surface. The process is 100% reproducible. We present evidence that the annealing is not caused by heat.
dc.formatText
dc.format.extent3 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAmerican Institute of Physicsen_US
dc.sourceApplied Physics Letters, 2000, Vol. 77, No. 13, pp. 1997-1999.
dc.subjectSilicon
dc.subjectPhosphorus-ion
dc.subjectAthermal annealingen_US
dc.titleAthermal Annealing of Phosphorus-Ion-Implanted Siliconen_US
txstate.documenttypeArticle
dc.identifier.doihttps://doi.org/10.1063/1.1312259
txstate.departmentPhysics


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