Athermal Annealing of Low-energy Boron Implants in Silicon
Date
2001-04-02
Authors
Donnelly, David W.
Covington, Billy C.
Grun, J.
Fischer, R.P.
Peckerar, M.
Felix, C. L.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Silicon samples that have been ion implanted with boron at energies below 3 keV have been athermally annealed. The annealing process has been characterized using secondary ion mass spectrometry and infrared absorption spectroscopy. The athermally annealed samples show activation comparable to that for thermally annealed samples, but with much less boron diffusion. The activation is the athermally annealed samples is shown to be much higher than would be achieved by recrystallization of the amorphous layer.
Description
Keywords
baron implants, silicon, athermal annealing, Physics
Citation
Donnelly, D. W., Covington, B. C., Grun, J., Fischer, R. P., Peckerar, M., & Felix, C. L. (2001). Athermal annealing of low-energy boron implants in silicon. Applied Physics Letters, 78(14), pp. 2000-2002.