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dc.contributor.authorDonnelly, David W. ( )
dc.contributor.authorCovington, Billy C. ( )
dc.contributor.authorGrun, J. ( )
dc.contributor.authorFischer, R.P. ( )
dc.contributor.authorPeckerar, M. ( )
dc.contributor.authorFelix, C. L. ( )
dc.date.accessioned2013-07-19T16:20:49Z
dc.date.available2013-07-19T16:20:49Z
dc.date.issued2001-04-02
dc.identifier.citationDonnelly, D. W., Covington, B. C., Grun, J., Fischer, R. P., Peckerar, M., & Felix, C. L. (2001). Athermal annealing of low-energy boron implants in silicon. Applied Physics Letters, 78(14), pp. 2000-2002.
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/4675
dc.description.abstractSilicon samples that have been ion implanted with boron at energies below 3 keV have been athermally annealed. The annealing process has been characterized using secondary ion mass spectrometry and infrared absorption spectroscopy. The athermally annealed samples show activation comparable to that for thermally annealed samples, but with much less boron diffusion. The activation is the athermally annealed samples is shown to be much higher than would be achieved by recrystallization of the amorphous layer.
dc.formatText
dc.format.extent3 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.sourceApplied Physics Letters, 2001, Vol. 78., No. 14, pp. 2000-2002.
dc.subjectBaron implants
dc.subjectSilicon
dc.subjectAthermal annealingen_US
dc.titleAthermal Annealing of Low-energy Boron Implants in Siliconen_US
txstate.documenttypeArticle
dc.identifier.doihttps://doi.org/10.1063/1.1359784
txstate.departmentPhysics


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