Electrical and Optical Properties of RRAM
Date
2016-08
Authors
Cui, Yubo
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Abstract
Recently several electronic devices have achieved significant enhancements that have been attributed to an oxidized NiFe layer. A study on lateral spin valves, was found to have an increased magnetoresistance after leaving it exposed to air. The enhancements were attributed to the partly oxidation of a NiFe layer [1]. Even more recently the turn on voltages of Hematite based water splitting devices was lowered to record low of .61 V with the addition of an amorphous NiFeOx layer [1]. We investigated the optical properties of NixFe1-x-oxide thin films that were deposited by reactive RF sputtering on different substrates. Deposition was performed in an AJA Magnetron System using a gas flow of 10 sccm and a sputter pressure of 10-3 Torr.
NixFe1-xOxide films were made for different substrate temperatures (room temperature-588 degrees Celsius), different deposition times (38-1200s), and different Oxygen flow rates (5-20%). Films with two different Fe concentrations were studied (10-19 at.%). The optical properties of the films from the UV to the far IR were studied by ellipsometer as a function of the deposition parameters. The electrical properties were studied by the linear four-point probe technique. Chemical composition, morphology and roughness were studied by EDAX, SEM, and AFM. In addition, three real RRAM memory cell device test wafers were made.
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Keywords
PyO, RRAM, Electrical and optical properties
Citation
Cui, Y. (2016). <i>Electrical and optical properties of RRAM</i> (Unpublished thesis). Texas State University, San Marcos, Texas.