Control of InGaAs and InAs Facets Using Metal Modulation Epitaxy
Date
2015-01-06
Authors
Wistey, Mark A.
Baraskar, Ashish K.
Singisetti, Uttam
Burek, Greg J.
Shin, Byungha
Kim, Eunji
McIntyre, Paul C.
Gossard, Arthur C.
Rodwell, Mark J. W.
Journal Title
Journal ISSN
Volume Title
Publisher
American Vacuum Society
Abstract
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source–drain access resistance. Higher As2 fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.
Description
Keywords
epitaxy, InGaAs, InAs, polycrystalline material, field effect transistors, Physics
Citation
Wistey, M. A., Baraskar, A. K., Singisetti, U., Burek, G. J., Shin, B., Kim, E., McIntyre, P. C., Gossard, A. C. & Rodwell, M. J. W. (2015). Control of InGaAs and InAs Facets Using Metal Modulation Epitaxy. Journal of Vacuum Science and Technology B, 33, 011208.