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dc.contributor.authorWistey, Mark A. ( )
dc.contributor.authorBaraskar, Ashish K. ( )
dc.contributor.authorSingisetti, Uttam ( )
dc.contributor.authorBurek, Greg J. ( )
dc.contributor.authorShin, Byungha ( )
dc.contributor.authorKim, Eunji ( )
dc.contributor.authorMcIntyre, Paul C. ( Orcid Icon 0000-0002-7498-831X )
dc.contributor.authorGossard, Arthur C. ( )
dc.contributor.authorRodwell, Mark J. W. ( )
dc.date.accessioned2019-04-09T19:18:05Z
dc.date.available2019-04-09T19:18:05Z
dc.date.issued2015-01-06
dc.identifier.citationWistey, M. A., Baraskar, A. K., Singisetti, U., Burek, G. J., Shin, B., Kim, E., McIntyre, P. C., Gossard, A. C. & Rodwell, M. J. W. (2015). Control of InGaAs and InAs Facets Using Metal Modulation Epitaxy. Journal of Vacuum Science and Technology B, 33, 011208.en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/7967
dc.description.abstractControl of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source–drain access resistance. Higher As2 fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.en_US
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAmerican Vacuum Societyen_US
dc.sourceJournal of Vacuum Science and Technology B, 2015, Vol. 33, 011208.
dc.subjectEpitaxyen_US
dc.subjectInGaAsen_US
dc.subjectInAsen_US
dc.subjectPolycrystalline materialen_US
dc.subjectField effect transistorsen_US
dc.titleControl of InGaAs and InAs Facets Using Metal Modulation Epitaxyen_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.identifier.doihttp://dx.doi.org/10.1116/1.4905497
dc.description.departmentPhysics


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