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dc.contributor.authorQi, Meng ( Orcid Icon 0000-0002-9943-0056 )
dc.contributor.authorO'Brien, William A. ( )
dc.contributor.authorStephenson, Chad A. ( Orcid Icon 0000-0002-3766-5247 )
dc.contributor.authorPatel, Victor ( )
dc.contributor.authorCao, Ning ( )
dc.contributor.authorThibeault, Brian J. ( )
dc.contributor.authorSchowalter, Marco ( Orcid Icon 0000-0001-5391-6934 )
dc.contributor.authorRosenauer, Andreas ( Orcid Icon 0000-0003-4742-0451 )
dc.contributor.authorProtasenko, Vladimir ( )
dc.contributor.authorXing, Huili Grace ( Orcid Icon 0000-0002-2709-3839 )
dc.contributor.authorWistey, Mark A. ( )
dc.date.accessioned2019-04-09T20:14:59Z
dc.date.available2019-04-09T20:14:59Z
dc.date.issued2017-03-26
dc.identifier.citationQi, M., O’Brien, W. A., Stephenson, C. A., Patel, V., Cao, N., Thibeault, B. J., Schowalter, M., Rosenauer, A., Protasenko, V., Xing, H. G. & Wistey, M. A. (2017). Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides. Crystals, 7, 157.en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/7969
dc.description.abstractTensile-strained Ge is a possible laser material for Si integrated circuits, but reports of lasers using tensile Ge show high threshold current densities and short lifetimes. To study the origins of these shortcomings, Ge ridge waveguides with tensile strain in three dimensions were fabricated using compressive silicon nitride (SiNx) films with up to 2 GPa stress as stress liners. A Raman peak shift of up to 11 cm−1 was observed, corresponding to 3.6% hydrostatic tensile strain for waveguides with a triangular cross-section. Real time degradation in tensile-strained Ge was observed and studied under transmission electron microscopy (TEM). A network of defects, resembling dark line defects, was observed to form and propagate with a speed and density strongly correlated with the local strain extracted from both modeled and measured strain profiles. This degradation suggests highly tensile-strained Ge lasers are likely to have significantly shorter lifetime than similar GaAs or InGaAs quantum well lasers.en_US
dc.formatText
dc.format.extent10 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherMultidisciplinary Digital Publishing Instituteen_US
dc.sourceCrystals, 2017, Vol. 7, 157.
dc.subjectStrained germaniumen_US
dc.subjectStress lineren_US
dc.subjectTensile strainen_US
dc.subjectDirect bandgapen_US
dc.subjectDark line defectsen_US
dc.subjectOptical waveguideen_US
dc.subjectStabilityen_US
dc.subjectSilicon photonicsen_US
dc.titleExtended Defect Propagation in Highly Tensile-Strained Ge Waveguidesen_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.rights.holder© 2017 The Authors.
dc.identifier.doihttps://doi.org/10.3390/cryst7060157
dc.rights.licenseCreative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
dc.description.departmentPhysics


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