Show simple item record

dc.contributor.authorJohnson, Derek W. ( )
dc.contributor.authorRavikirthi, Pradhyumna ( )
dc.contributor.authorSuh, Jae Woo ( )
dc.contributor.authorLee, Rinus T. P. ( )
dc.contributor.authorHill, Richard J. W. ( )
dc.contributor.authorWong, Man Hoi ( )
dc.contributor.authorPiner, Edwin L. ( )
dc.contributor.authorHarris, Harlan Rusty ( )
dc.date.accessioned2019-04-11T17:45:02Z
dc.date.available2019-04-11T17:45:02Z
dc.date.issued2014-05-23
dc.identifier.citationJohnson, D. W., Ravikirthi, P., Suh, J. W., Lee, R. T. P., Hill, R. J. W., Wong, M. H., Piner, E. L. & Harris, H. R. (2014). Challenges of contact module integration for GaN-based devices in a Si-CMOS environment. Journal of Vacuum Science & Technology B, 32(3), 030606.en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/7975
dc.description.abstractThe authors report on the integration of an Au-free contact module intended for AlGaN/GaN high-electron-mobility transistors fabricated in a 200 mm Si complementary metal–oxide–semiconductor facility. Contacts are characterized via transfer line method structures, tunneling electron microscopy, and energy-dispersive x-ray spectroscopy. Factors leading to incorrect extraction of contact resistance are discussed. The authors find that reoptimization of chemical vapor deposited silicon nitride on AlGaN/GaN substrates is required to ensure reliable determination of contact resistance, gate-to-source spacing, and gate-to-drain spacing. Additional process development is required to enable parallel processing of Si and GaN devices.en_US
dc.formatText
dc.format.extent4 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.sourceJournal of Vacuum Science & Technology B, 2014, Vol. 32, No. 3.
dc.subjectSemiconductorsen_US
dc.subjectContact module integrationen_US
dc.subjectGaN-based devicesen_US
dc.subjectSi devicesen_US
dc.subjectOptical computingen_US
dc.titleChallenges of Contact Module Integration for GaN-based Devices in a Si-CMOS Environmenten_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.identifier.doihttps://doi.org/10.1116/1.4874801
txstate.departmentPhysics


Download

Thumbnail

This item appears in the following Collection(s)

Show simple item record