Challenges of Contact Module Integration for GaN-based Devices in a Si-CMOS Environment
Date
2014-05-23
Authors
Johnson, Derek W.
Ravikirthi, Pradhyumna
Suh, Jae Woo
Lee, Rinus T. P.
Hill, Richard J. W.
Wong, Man Hoi
Piner, Edwin L.
Harris, Harlan Rusty
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
The authors report on the integration of an Au-free contact module intended for AlGaN/GaN high-electron-mobility transistors fabricated in a 200 mm Si complementary metal–oxide–semiconductor facility. Contacts are characterized via transfer line method structures, tunneling electron microscopy, and energy-dispersive x-ray spectroscopy. Factors leading to incorrect extraction of contact resistance are discussed. The authors find that reoptimization of chemical vapor deposited silicon nitride on AlGaN/GaN substrates is required to ensure reliable determination of contact resistance, gate-to-source spacing, and gate-to-drain spacing. Additional process development is required to enable parallel processing of Si and GaN devices.
Description
Keywords
semiconductors, contact module integration, GaN-based devices, Si devices, optical computing, Physics
Citation
Johnson, D. W., Ravikirthi, P., Suh, J. W., Lee, R. T. P., Hill, R. J. W., Wong, M. H., Piner, E. L. & Harris, H. R. (2014). Challenges of contact module integration for GaN-based devices in a Si-CMOS environment. Journal of Vacuum Science & Technology B, 32(3), 030606.