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dc.contributor.authorNazari, Mohammad ( )
dc.contributor.authorHancock, Bobby Logan ( )
dc.contributor.authorAnderson, J. ( )
dc.contributor.authorSavage, A. ( )
dc.contributor.authorPiner, Edwin L. ( )
dc.contributor.authorGraham, S. ( )
dc.contributor.authorFaili, F. ( )
dc.contributor.authorOh, S. ( )
dc.contributor.authorFrancis, D. ( )
dc.contributor.authorTwitchen, D. ( )
dc.contributor.authorHoltz, Mark ( Orcid Icon 0000-0001-9524-964X )
dc.date.accessioned2019-04-11T19:29:15Z
dc.date.available2019-04-11T19:29:15Z
dc.date.issued2016-01-19
dc.identifier.citationNazari, M., Hancock, B. L., Anderson, J., Savage, A., Piner, E. L., Graham, S., Faili, F., Oh, S., Francis, D., Twitchen, D. & Holtz, M. (2016). Near-ultraviolet micro-Raman study of diamond grown on GaN. Applied Physics Letters, 108(3), 031901.en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/7977
dc.description.abstractUltraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ∼3.5 μm. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction.en_US
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.sourceApplied Physics Letters, 2016, Vol. 108, Issue 3.
dc.subjectDiamonden_US
dc.subjectPolycrystalline materialen_US
dc.subjectRaman spectroscopyen_US
dc.subjectChemical elementsen_US
dc.titleNear-Ultraviolet Micro-Raman Study of Diamond Grown on GaNen_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.identifier.doihttp://dx.doi.org/10.1063/1.4940200
dc.description.departmentPhysics


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