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dc.contributor.authorHancock, Bobby Logan ( )
dc.contributor.authorNazari, Mohammad ( )
dc.contributor.authorAnderson, J. ( )
dc.contributor.authorPiner, Edwin L. ( )
dc.contributor.authorFaili, F. ( )
dc.contributor.authorOh, S. ( )
dc.contributor.authorTwitchen, D. ( )
dc.contributor.authorGraham, S. ( )
dc.contributor.authorHoltz, Mark ( Orcid Icon 0000-0001-9524-964X )
dc.date.accessioned2019-04-11T19:42:55Z
dc.date.available2019-04-11T19:42:55Z
dc.date.issued2016-05-23
dc.identifier.citationHancock, B. L., Nazari, M., Anderson, J., Piner, E., Faili, F., Oh, S., Twitchen, D., Graham, S. & Holtz, M. (2016). Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer. Applied Physics Letters, 108(3), 211901.en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/7978
dc.description.abstractFull-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86 ± 0.07 GPa at the free GaN surface compared to 0.23 ± 0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence.en_US
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.sourceApplied Physics Letters, 2016, Vol. 108, Issue 21.
dc.subjectUltraviolet micro-Raman spectroscopyen_US
dc.subjectDiamonden_US
dc.subjectChemical vapor depositionen_US
dc.titleUltraviolet Micro-Raman Spectroscopy Stress Mapping of a 75-mm GaN-on-Diamond Waferen_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.identifier.doihttp://dx.doi.org/10.1063/1.4952596
dc.description.departmentPhysics


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