dc.contributor.author | Hancock, Bobby Logan ( ) | |
dc.contributor.author | Nazari, Mohammad ( ) | |
dc.contributor.author | Anderson, J. ( ) | |
dc.contributor.author | Piner, Edwin L. ( ) | |
dc.contributor.author | Faili, F. ( ) | |
dc.contributor.author | Oh, S. ( ) | |
dc.contributor.author | Twitchen, D. ( ) | |
dc.contributor.author | Graham, S. ( ) | |
dc.contributor.author | Holtz, Mark ( 0000-0001-9524-964X ) | |
dc.date.accessioned | 2019-04-11T19:42:55Z | |
dc.date.available | 2019-04-11T19:42:55Z | |
dc.date.issued | 2016-05-23 | |
dc.identifier.citation | Hancock, B. L., Nazari, M., Anderson, J., Piner, E., Faili, F., Oh, S., Twitchen, D., Graham, S. & Holtz, M. (2016). Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer. Applied Physics Letters, 108(3), 211901. | en_US |
dc.identifier.uri | https://digital.library.txstate.edu/handle/10877/7978 | |
dc.description.abstract | Full-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86 ± 0.07 GPa at the free GaN surface compared to 0.23 ± 0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence. | en_US |
dc.format | Text | |
dc.format.extent | 5 pages | |
dc.format.medium | 1 file (.pdf) | |
dc.language.iso | en | |
dc.publisher | AIP Publishing | en_US |
dc.source | Applied Physics Letters, 2016, Vol. 108, Issue 21. | |
dc.subject | Ultraviolet micro-Raman spectroscopy | en_US |
dc.subject | Diamond | en_US |
dc.subject | Chemical vapor deposition | en_US |
dc.title | Ultraviolet Micro-Raman Spectroscopy Stress Mapping of a 75-mm GaN-on-Diamond Wafer | en_US |
dc.type | publishedVersion | |
txstate.documenttype | Article | |
dc.identifier.doi | http://dx.doi.org/10.1063/1.4952596 | |
dc.description.department | Physics | |