Ultraviolet Micro-Raman Stress Map of Polycrystalline Diamond Grown Selectivity on Silicon Substrates Using Chemical Vapor Deposition
Date
2018-05-03
Authors
Ahmed, Raju
Nazari, Mohammad
Hancock, Bobby Logan
Simpson, J.
Engdahl, C.
Piner, Edwin L.
Holtz, Mark
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
Polycrystalline diamond stripes, with a nominal thickness of ∼1.5 μm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping reveal high compressive stress, up to ∼0.85 GPa, at the center of the diamond stripe, and moderate tensile stress, up to ∼0.14 GPa, in the substrate close to the interface with the diamond. Compressive stresses on diamond decrease with diminishing stripe widths. The stress map is well-described using finite element simulation incorporating solely thermal expansion effects.
Description
Keywords
diamond, ultraviolet micro-raman stress map, chemical vapor, thermal effects, Physics
Citation
Ahmed, R., Nazari, M., Hancock, B. L., Simpson, J., Engdahl, C., Piner, E. L. & Holtz, M. W. (2018). Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectivity on silicon substrates using chemical vapor deposition. Applied Physics Letters, 112(18), 181907.