Hydrogen-doping Stabilized Metallic VO2 (R) Thin Films and their Application to Suppress Fabry-Perot Resonances in the Terahertz Regime
Date
2014-06-16
Authors
Zhao, Yong
Karaoglan-Bebek, Gulten
Pan, Xuan
Holtz, Mark
Bernussi, Ayrton
Fan, Zhaoyang
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
We demonstrate that catalyst-assisted hydrogen spillover doping of VO2 thin films significantly alters the metal-insulator transition characteristics and stabilizes the metallic rutile phase at room temperature. With hydrogen inserted into the VO2 lattice, high resolution X-ray diffraction reveals expansion of the V-V chain separation when compared to the VO2(R) phase. The donated free electrons, possibly from O-H bond formation, stabilize the VO2(R) to low temperatures. By controlling the amount of dopants to obtain mixed insulating and metallic phases, VO2 resistivity can be continuously tuned until a critical condition is achieved that suppresses Fabry-Perot resonances. Our results demonstrate that hydrogen spillover is an effective technique to tune the electrical and optical properties of VO2 thin films.
Description
Keywords
electrooptical effects, thin films, chemical bonding, transition metal oxides, chemical elements, phase transitions, optical resonators, Physics
Citation
Zhao, Y., Karaoglan-Bebek, G., Pan, X., Holtz, M., Bernussi, A. A., & Fan, Z. (2014). Hydrogen-doping stabilized metallic VO2 (R) thin films and their application to suppress Fabry-Perot resonances in the terahertz regime. Applied Physics Letters, 104(24).