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dc.contributor.authorKaraoglan-Bebek, Gulten ( Orcid Icon 0000-0003-0728-7625 )
dc.contributor.authorWoo, Jung Hwan ( )
dc.contributor.authorNikishin, Sergey ( )
dc.contributor.authorHarris, Harlan Rusty ( )
dc.contributor.authorHoltz, Mark ( Orcid Icon 0000-0001-9524-964X )
dc.date.accessioned2019-05-20T20:23:33Z
dc.date.available2019-05-20T20:23:33Z
dc.date.issued2014-01-09
dc.identifier.citationKaraoglan-Bebek, G., Woo, J. H., Nikishin, S., Harris, H. R., & Holtz, M. (2014). Optical studies of the effect of oxidation on GaN. Journal of Vacuum Science & Technology B, 32(1).en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/8203
dc.description.abstractOptical studies are reported of GaN following oxide layer growth using thermal oxidation and atomic layer deposition (ALD). The low-temperature photoluminescence (PL) probes the topmost GaN layer (<100 nm) where any influence from the oxide is expected. Thermal oxidation results in a 6 meV blue shift of the main PL band (3.478 eV) that is attributed to stress due to formation of GaON/b-Ga2O3 upon the GaN surface. A weak PL feature at 3.38 eV is due to diffusion of oxygen into the GaN. The Al2O3 deposited by ALD does not result in the 3.38 eV band following deposition and subsequent annealing. In contrast, HfO2 deposited by ALD results in sub-band gap features, which strengthen upon annealing. No appreciable stress is observed for either oxide deposited using ALD, which are not expected to produce GaON/b-Ga2O3 layer.en_US
dc.formatText
dc.format.extent4 pages
dc.format.medium1 file (.pdf)
dc.language.isoen_USen_US
dc.publisherAmerican Vacuum Societyen_US
dc.sourceJournal of Vacuum Science & Technology B, 2014, Vol. 32, Issue 1.
dc.subjectThermal oxidationen_US
dc.subjectAtomic layer depositionen_US
dc.subjectMetal oxidesen_US
dc.subjectLaser physicsen_US
dc.subjectOptical studiesen_US
dc.subjectMetal oxidesen_US
dc.subjectChemical elementsen_US
dc.titleOptical Studies of the Effect of Oxidation on GaNen_US
txstate.documenttypeArticle
dc.identifier.doihttp://dx.doi.org/10.1116/1.4858467
txstate.departmentPhysics


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