Radiative and Interfacial Recombination in CdTe Heterostructures
Date
2014-12-02
Authors
Swartz, Craig H.
Edirisooriya, Madhavie
LeBlanc, E. G.
Noriega, O. C.
Jayathilaka, Pathiraja A. R. D.
Ogedengbe, Olanrewaju S.
Hancock, Bobby L.
Holtz, Mark
Myers, Thomas H.
Zaunbrecher, K. N.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non- radiative recombination rates by examining the dependence of photoluminescence (PL) on both ex-citation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10 10 cm-2 and carrier life- times as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10 -10 cm3s-1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.
Description
Keywords
double heterostructures, laser theory, heterostructures, semiconductors, chemical compounds, optical metrology, leptons, Physics
Citation
Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, H., & Zaunbrecher, K. N. (2014). Radiative and interfacial recombination in CdTe heterostructures. Applied Physics Letters, 105(22).