| dc.contributor.author | Swartz, Craig H. ( ) | |
| dc.contributor.author | Edirisooriya, Madhavie ( ) | |
| dc.contributor.author | LeBlanc, E. G. (  0000-0003-0520-8268 ) | |
| dc.contributor.author | Noriega, O. C. ( ) | |
| dc.contributor.author | Jayathilaka, Pathiraja A. R. D. ( ) | |
| dc.contributor.author | Ogedengbe, Olanrewaju S. ( ) | |
| dc.contributor.author | Hancock, Bobby L. ( ) | |
| dc.contributor.author | Holtz, Mark ( 0000-0001-9524-964X ) | |
| dc.contributor.author | Myers, Thomas H. ( ) | |
| dc.contributor.author | Zaunbrecher, K. N. ( ) | |
| dc.date.accessioned | 2019-05-20T20:45:23Z | |
| dc.date.available | 2019-05-20T20:45:23Z | |
| dc.date.issued | 2014-12-02 | |
| dc.identifier.citation | Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, H., & Zaunbrecher, K. N. (2014). Radiative and interfacial recombination in CdTe heterostructures. Applied Physics Letters, 105(22). | en_US |
| dc.identifier.uri | https://digital.library.txstate.edu/handle/10877/8204 | |
| dc.description.abstract | Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non- radiative recombination rates by examining the dependence of photoluminescence (PL) on both ex-citation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm-2 and carrier life- times as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10-10 cm3s-1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate. | en_US |
| dc.format | Text | |
| dc.format.extent | 4 pages | |
| dc.format.medium | 1 file (.pdf) | |
| dc.language.iso | en | |
| dc.publisher | American Institute of Physics | en_US |
| dc.source | Applied Physics Letters, 2014, Vol. 105, Issue 22. | |
| dc.subject | Double heterostructures | en_US |
| dc.subject | Laser theory | en_US |
| dc.subject | Heterostructures | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Chemical compounds | en_US |
| dc.subject | Optical metrology | en_US |
| dc.subject | Leptons | en_US |
| dc.title | Radiative and Interfacial Recombination in CdTe Heterostructures | en_US |
| dc.type | publishedVersion | |
| txstate.documenttype | Article | |
| dc.identifier.doi | https://doi.org/10.1063/1.4902926 | |
| dc.description.department | Physics | |
