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dc.contributor.authorHutchins, Travis H. ( )
dc.contributor.authorNazari, Mohammad ( )
dc.contributor.authorEridisoorya, Madhavie ( )
dc.contributor.authorMyers, T. M. ( )
dc.contributor.authorHoltz, Mark ( Orcid Icon 0000-0001-9524-964X )
dc.date.accessioned2019-05-20T21:21:38Z
dc.date.available2019-05-20T21:21:38Z
dc.date.issued2015-01-16
dc.identifier.citationHutchins, T., Nazari, M., Eridisoorya, M., Myers, T. M., & Holtz, M. (2015). Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber. Review of Scientific Instruments, 86(1).en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/8206
dc.description.abstractA method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.en_US
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAmerican Institute of Physicsen_US
dc.sourceReview of Scientific Instruments, 2015, Vol. 86, No. 1.
dc.subjectEpitaxyen_US
dc.subjectCarbidesen_US
dc.subjectThermal instrumentsen_US
dc.subjectRaman spectroscopyen_US
dc.subjectThermoelectricityen_US
dc.subjectPhononsen_US
dc.titleRaman Measurements of Substrate Temperature in a Molecular Beam Epitaxy Growth Chamberen_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.identifier.doihttp://dx.doi.org/10.1063/1.4905858
txstate.departmentPhysics


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