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dc.contributor.authorSwartz, Craig H. ( )
dc.contributor.authorZaunbrecher, K. N. ( )
dc.contributor.authorSohal, Sandeep ( Orcid Icon 0000-0003-4235-9778 )
dc.contributor.authorLeBlanc, E. G. ( Orcid Icon 0000-0003-0520-8268 )
dc.contributor.authorEdirisooriya, Madhavie ( )
dc.contributor.authorOgedengbe, Olanrewaju S. ( )
dc.contributor.authorPetersen, John E. ( )
dc.contributor.authorJayathilaka, Pathiraja A. R. D. ( )
dc.contributor.authorMyers, Thomas H. ( )
dc.contributor.authorHoltz, Mark ( Orcid Icon 0000-0001-9524-964X )
dc.contributor.authorBarnes, T. M. ( )
dc.date.accessioned2019-05-20T21:38:52Z
dc.date.available2019-05-20T21:38:52Z
dc.date.issued2016-10-28
dc.identifier.citationSwartz, C. H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., & Barnes, T. M. (2016). Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. Journal of Applied Physics, 120(16).en_US
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/8207
dc.description.abstractCdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excita- tion intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 1016cm-3. An analysis of the excitation intensity dependence of room tem- perature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.en_US
dc.formatText
dc.format.extent7 pages
dc.format.medium1 file (.pdf)
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.sourceJournal of Applied Physics, 2016, Vol. 120, No. 16.
dc.subjectPhotoluminescenceen_US
dc.subjectOhmic contactsen_US
dc.subjectNeutron cross sectionen_US
dc.subjectChemical elementsen_US
dc.subjectPhotocarrieren_US
dc.titleFactors Influencing Photoluminescence and Photocarrier Lifetime in CdSeTe/CdMgTe Double Heterostructuresen_US
txstate.documenttypeArticle
dc.identifier.doihttps://doi.org/10.1063/1.4966574
txstate.departmentPhysics


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