Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering
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The electrical properties of Radio Frequency Sputtered NiFeO and NiO films deposited on n and p-type Silicon was investigated for two different oxygen flows. Rectifying properties for Ni0.8Fe0.2Oα on n-Si showed Iforward/Ireverse >10,000 for α>1 and Iforward/Ireverse >50 for α<1. Both types of devices have opposite forward biases. Resistive switching was found for low oxygen samples but not for high oxygen flow samples. Results suggest that NiFeO sputtered at high oxygen flow is p-type. For NiO and NiFeO on p-Si no strong rectifying properties were observed. The specific contact resistivity of Pt/Ni0.9Fe0.1Oα (α>1) was estimated from the difference between the 2pp and 4pp resistance (0.0007 ± 0.0003 Ω cm2). The carrier concentration and mobility for high oxygen flow samples were calculated using the perpendicular resistivity and transition voltage between Ohmic and V 2 behavior and were 5.73 × 1017 cm-3 and 8.6 × 10-4 cm2 /Vs. This mobility does not tell which charge carrier is dominating. Through CV analysis the acceptor mobility was calculated to be approximately 8 × 10-3 cm2 /Vs. The acceptor concentration for NiFeO was approximated to be 8 × 1016 cm-3 through CV analysis.