Surface Treatments to Reduce Leakage Current in In0.53Ga0.47As p-i-n Diodes
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The impact of mesa surface conditions on the dark current of a homojunction In0.53Ga0.47 As p-i-n diode has been investigated. Three treatments were performed on mesa structures with a 100 nm i-layer-sidewall exposure to O2 plasma, sulfide treatment, and divinylsiloxane-bis-benzocyclobutene (BCB) passivation that resulted in perimeter normalized current, J1, of 0.01A/cm, 0.35lA/cm, and 35 μA/cm, respectively. This study spanned several days and it was shown that sulfide layer, unless properly capped, deteriorates over time whereas the BCB passivation properly encapsulates the mesa and does not degrade for longer periods of time.