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Surface Treatments to Reduce Leakage Current in In0.53Ga0.47As p-i-n Diodes

dc.contributor.authorGaur, Abhinav ( )
dc.contributor.authorManwaring, Ian ( )
dc.contributor.authorFilmer, Matthew J. ( )
dc.contributor.authorThomas, Paul M. ( )
dc.contributor.authorRommel, Sean L. ( Orcid Icon 0000-0001-5996-0813 )
dc.contributor.authorBhatnagar, Kunal ( )
dc.contributor.authorDroopad, Ravi ( )
dc.date.accessioned2020-04-20T18:54:49Z
dc.date.available2020-04-20T18:54:49Z
dc.date.issued2015-03-18
dc.identifier.citationGaur, A., Manwaring, I., Filmer, M. J., Thomas, P. M., Rommel, S. L., Bhatnagar, K., & Droopad, R. (2015). Surface treatments to reduce leakage current in In0.53Ga0.47As p-i-n diodes. Journal of Vacuum Science and Technology B, 33(2).en_US
dc.identifier.issn2166-2746
dc.identifier.urihttps://digital.library.txstate.edu/handle/10877/9652
dc.description.abstractThe impact of mesa surface conditions on the dark current of a homojunction In0.53Ga0.47 As p-i-n diode has been investigated. Three treatments were performed on mesa structures with a 100 nm i-layer-sidewall exposure to O2 plasma, sulfide treatment, and divinylsiloxane-bis-benzocyclobutene (BCB) passivation that resulted in perimeter normalized current, J1, of 0.01A/cm, 0.35lA/cm, and 35 μA/cm, respectively. This study spanned several days and it was shown that sulfide layer, unless properly capped, deteriorates over time whereas the BCB passivation properly encapsulates the mesa and does not degrade for longer periods of time.en_US
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.language.isoen
dc.publisherAmerican Vacuum Societyen_US
dc.sourceJournal of Vacuum Science and Technology: Part B-Nanotechnology and Microelectronics, March/April 2015, Vol. 33, No. 2.
dc.subjectPIN diodesen_US
dc.subjectSurface preparationen_US
dc.subjectStray currentsen_US
dc.subjectPassivationen_US
dc.subjectMetal oxide semiconductor field-effect transistorsen_US
dc.subjectBenzocyclobuteneen_US
dc.titleSurface Treatments to Reduce Leakage Current in In0.53Ga0.47As p-i-n Diodesen_US
dc.typepublishedVersion
txstate.documenttypeArticle
dc.rights.holder© 2016 American Vacuum Society.
dc.identifier.doihttps://doi.org/10.1116/1.4914403
dc.description.departmentEngineering


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