Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects
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We study the reliability of Al2O3/InGaAs metal-oxide-semiconductor gate stacks by investigating the effect of bias temperature stress on the charge trap density at the Al2O3/InGaAs interface and in the bulk oxide. Under extended negative biasing at 100 °C, the gate stacks display a notable increase in the interface trap density (Dit), but little change in the border trap density. This phenomenon is more prominent for samples exposed to a H2/N2 forming gas anneal (FGA) than for the as-deposited samples. Negative gate bias applied during 100 °C thermal stress negates the FGA-induced passivation of interface states and causes convergence of the Dit of the post-FGA and as-deposited gate stacks with increasing biasing time. This appears to be caused by hydrogen depassivation of interface traps under bias temperature stress, which is further supported by an observed hydrogen isotope effect when comparing the rate of Dit increase after annealing in hydrogenated versus deuterated forming gas. A N2 anneal control experiment also indicates that the stability of the interface trap density of post-FGA Al2O3/InGaAs gate stacks is more strongly influenced by the behavior of hydrogen at the interface than by the thermal treatment effect of the anneal.