The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric

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dc.contributor.advisorGolding, Terry
dc.contributor.authorYust, Brian
dc.contributor.committeeMemberVentrice, Carl
dc.contributor.committeeMemberSpencer, Gregory
dc.date.accessioned2012-02-24T10:20:27Z
dc.date.available2012-02-24T10:20:27Z
dc.date.issued2008-05
dc.description.abstractIn this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage current, and carrier separation measurements to examine the trap generation phenomena. Of interest in the study was location of the trap generation in the gate stack, whether or not the degradation was gradual, and if the degradation in PMOS occurred in the same manner as NMOS devices.
dc.description.departmentPhysics
dc.formatText
dc.format.extent90 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationYust, B. (2008). The degradation and time-dependent breakdown of P-type Mosfets with a high-k dielectric (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.
dc.identifier.urihttps://hdl.handle.net/10877/4011
dc.language.isoen
dc.subjectMosfets
dc.subjecthigh-k dialectric
dc.subjectbreakdown
dc.subjectcharge pumping
dc.titleThe Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
dc.typeThesis
thesis.degree.departmentPhysics
thesis.degree.disciplinePhysics
thesis.degree.grantorTexas State University-San Marcos
thesis.degree.levelMasters
thesis.degree.nameMaster of Science

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