Near-Ultraviolet Micro-Raman Study of Diamond Grown on GaN

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dc.contributor.authorNazari, Mohammad
dc.contributor.authorHancock, Bobby Logan
dc.contributor.authorAnderson, J.
dc.contributor.authorSavage, A.
dc.contributor.authorPiner, Edwin L.
dc.contributor.authorGraham, S.
dc.contributor.authorFaili, F.
dc.contributor.authorOh, S.
dc.contributor.authorFrancis, D.
dc.contributor.authorTwitchen, D.
dc.contributor.authorHoltz, Mark
dc.date.accessioned2019-04-11T19:29:15Z
dc.date.available2019-04-11T19:29:15Z
dc.date.issued2016-01-19
dc.description.abstractUltraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ∼3.5 μm. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction.
dc.description.departmentPhysics
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationNazari, M., Hancock, B. L., Anderson, J., Savage, A., Piner, E. L., Graham, S., Faili, F., Oh, S., Francis, D., Twitchen, D. & Holtz, M. (2016). Near-ultraviolet micro-Raman study of diamond grown on GaN. Applied Physics Letters, 108(3), 031901.
dc.identifier.doihttp://dx.doi.org/10.1063/1.4940200
dc.identifier.urihttps://hdl.handle.net/10877/7977
dc.language.isoen
dc.publisherAIP Publishing
dc.sourceApplied Physics Letters, 2016, Vol. 108, Issue 3.
dc.subjectDiamond
dc.subjectpolycrystalline material
dc.subjectraman spectroscopy
dc.subjectchemical elements
dc.subjectPhysics
dc.titleNear-Ultraviolet Micro-Raman Study of Diamond Grown on GaN
dc.typeArticle

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