Control of InGaAs and InAs Facets Using Metal Modulation Epitaxy

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dc.contributor.authorWistey, Mark A.
dc.contributor.authorBaraskar, Ashish K.
dc.contributor.authorSingisetti, Uttam
dc.contributor.authorBurek, Greg J.
dc.contributor.authorShin, Byungha
dc.contributor.authorKim, Eunji
dc.contributor.authorMcIntyre, Paul C.
dc.contributor.authorGossard, Arthur C.
dc.contributor.authorRodwell, Mark J. W.
dc.date.accessioned2019-04-09T19:18:05Z
dc.date.available2019-04-09T19:18:05Z
dc.date.issued2015-01-06
dc.description.abstractControl of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source–drain access resistance. Higher As2 fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.
dc.description.departmentPhysics
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationWistey, M. A., Baraskar, A. K., Singisetti, U., Burek, G. J., Shin, B., Kim, E., McIntyre, P. C., Gossard, A. C. & Rodwell, M. J. W. (2015). Control of InGaAs and InAs Facets Using Metal Modulation Epitaxy. Journal of Vacuum Science and Technology B, 33, 011208.
dc.identifier.doihttp://dx.doi.org/10.1116/1.4905497
dc.identifier.urihttps://hdl.handle.net/10877/7967
dc.language.isoen
dc.publisherAmerican Vacuum Society
dc.sourceJournal of Vacuum Science and Technology B, 2015, Vol. 33, 011208.
dc.subjectepitaxy
dc.subjectInGaAs
dc.subjectInAs
dc.subjectpolycrystalline material
dc.subjectfield effect transistors
dc.subjectPhysics
dc.titleControl of InGaAs and InAs Facets Using Metal Modulation Epitaxy
dc.typeArticle

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