Determination of the Depletion Layer Width and Effects on the Formation of Double-2DEG in AlGaAs/GaAs Heterostructures

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dc.contributor.authorCortes-Mestizo, Irving E.
dc.contributor.authorEspinosa-Vega, Leticia I.
dc.contributor.authorEspinoza-Figueroa, Jose Angel
dc.contributor.authorCisneros-de-la-Rosa, Alejandro
dc.contributor.authorEugenio-Lopez, Eric
dc.contributor.authorBriones, Edgar
dc.contributor.authorBriones, Joel
dc.contributor.authorZamora-Peredo, Luis
dc.contributor.authorDroopad, Ravi
dc.contributor.authorYee-Rendon, Cristo
dc.date.accessioned2020-04-20T18:01:04Z
dc.date.available2020-04-20T18:01:04Z
dc.date.issued2016-03-01
dc.description.abstractIn this work, the influence of the surface depletion layer on the formation of a two-dimensional electron gas in AlGaAs/GaAs modulated doped heterostructures is studied. The authors explore a method for estimating the depletion region inside of the GaAs-based heterostructures by using the longitudinal optical and L- amplitude modes observed in Raman spectra, which are supported by the modeling results. The authors found that the position of the topmost doping layer changes the electron distribution in the heterostructure and decreases the influence of the depletion layer. Similar effects are perceived when an optimized solution of (NH4)2SX and isopropanol is employed. The authors present a method to evaluate the formation of a double two-dimensional electron gas in a heterostructure by the adequate use of modulation line in the photoreflectance spectroscopy.
dc.description.departmentEngineering
dc.formatText
dc.format.extent8 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationCortes-Mestizo, I. E., Espinosa-Vega, L. I., Espinoza-Figueroa, J. A., Cisneros-de-la-Rosa, A., Eugenio-Lopez, E., Mendez-Garcia, V. H., Briones, E., Briones, J., Zamora-Peredo, L., Droopad, R., & Yee-Rendon, C. (2016). Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures. Journal of Vacuum Science and Technology B, 34(2).
dc.identifier.doihttps://doi.org/10.1116/1.4942898
dc.identifier.issn2166-2746
dc.identifier.urihttps://hdl.handle.net/10877/9651
dc.language.isoen
dc.publisherAmerican Vacuum Society
dc.rights.holder© 2016 American Vacuum Society.
dc.sourceJournal of Vacuum Science and Technology B, 2016, Vol. 34, No. 2, Article 02L110.
dc.subjectdouble-2DEG
dc.subjectAIGaAs/GaAs heterostructures
dc.subjectsurface depletion layer
dc.subjectIngram School of Engineering
dc.titleDetermination of the Depletion Layer Width and Effects on the Formation of Double-2DEG in AlGaAs/GaAs Heterostructures
dc.typeArticle

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