Ge Quantum Dots Encapsulated by AIAs Grown by Molecular Beam Epitaxy on GaAs without Extended Defects

Simple item page
dc.contributor.authorQi, Meng
dc.contributor.authorStephenson, Chad A.
dc.contributor.authorProtasenko, Vladimir
dc.contributor.authorO'Brien, William A.
dc.contributor.authorMintairov, Alexander
dc.contributor.authorXing, Huili Grace
dc.contributor.authorWistey, Mark A.
dc.date.accessioned2019-04-09T18:49:08Z
dc.date.available2019-04-09T18:49:08Z
dc.date.issued2014-02
dc.description.abstractWe demonstrate nearly spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy. The QDs were formed without a wetting layer using a high temperature, in situ anneal. Subsequent AlAs overgrowth was free from anti-phase domains and threading dislocations in cross section transmission electron microscopy. The straddling band alignment for Ge in AlAs promises strong and tunable confinement for both electrons and holes. The reflection high-energy electron diffraction pattern changed from 2 × 3 to 2 × 5 with anneal, which can be explained by surface reconstructions based on the electron-counting model.
dc.description.departmentPhysics
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationQi, Meng, Stephenson, C. A., Protasenko, V., O'Brien, W. A., Mintairov, A., King, Huili Grace & Wistey, M. A. (2014). Ge quantum dots encapsulated by AIAs grown by molecular beam epitaxy on GaAs without Extended Defects. Applied Physics Letters, 104, 073113.
dc.identifier.doihttp://dx.doi.org/10.1063/1.4866278
dc.identifier.urihttps://hdl.handle.net/10877/7966
dc.language.isoen
dc.publisherAIP Publishing
dc.sourceApplied Physics Letters, 2014, Vol. 104, 073113.
dc.subjectGe quantum dots
dc.subjectAIAs
dc.subjectmolecular beam epitaxy
dc.subjectGaAs
dc.subjectPhysics
dc.titleGe Quantum Dots Encapsulated by AIAs Grown by Molecular Beam Epitaxy on GaAs without Extended Defects
dc.typeArticle

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
2017-Ge-quantum-dots-encapsulated-by-AIAs.pdf
Size:
1.32 MB
Format:
Adobe Portable Document Format
Description:
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
2.54 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

College of Science and Engineering