Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

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dc.contributor.authorJewel, Mohi Uddin
dc.contributor.authorMonne, Mahmuda Akter
dc.contributor.authorMishra, Bhagyashree
dc.contributor.authorChen, Maggie Yihong
dc.date.accessioned2020-03-11T17:14:06Z
dc.date.available2020-03-11T17:14:06Z
dc.date.issued2020-02
dc.description.abstractFully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS2) by multiple printing passes to construct a MoS2−NDG stack. We demonstrate top-gated fully inkjet-printed MoS2−NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO3) dielectric. A 100% inkjet-printed MoS2−NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches.
dc.description.departmentEngineering
dc.formatText
dc.format.extent13 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationJewel, M. U., Monne, M. A., Mishra, B., & Chen, M. Y. (2020). Inkjet-printed molybdenum disulfide and nitrogen-doped graphene active layer high on/off ratio transistors. Molecules, 25(5), 1081.
dc.identifier.doihttps://doi.org/10.3390/molecules25051081
dc.identifier.issn1420-3049
dc.identifier.urihttps://hdl.handle.net/10877/9379
dc.language.isoen
dc.publisherMultidisciplinary Digital Publishing Institute
dc.rights.holder© 2020 The Authors.
dc.rights.licenseThis work is licensed under a Creative Commons Attribution 4.0 International License.
dc.sourceMolecules, 2020, Vol. 25, No. 5, Article 1081.
dc.subjectgraphene
dc.subjectmolybdenum disulfide
dc.subjectraman
dc.subjectthin-films
dc.subjectcross-section
dc.subjectnanosheets
dc.subjecton/off ratio
dc.subjecttransistor
dc.subjectinkjet printing
dc.subjectIngram School of Engineering
dc.titleInkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors
dc.typeArticle

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