Oxides on Semiconductors for Novel Device Applications

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dc.contributor.advisorDroopad, Ravi
dc.contributor.authorGatabi, Javad R.
dc.contributor.committeeMemberGeerts, Wilhelmus J.
dc.contributor.committeeMemberPowell, Clois E.
dc.contributor.committeeMemberIrvin, David
dc.contributor.committeeMemberChen, Yihong
dc.date.accessioned2018-09-20T20:38:28Z
dc.date.available2018-09-20T20:38:28Z
dc.date.issued2016-05
dc.description.abstractOxide materials possess unique functionalities which when combined with semiconductors will enable a variety of novel device applications. They have properties that include high dielectric constant, ferromagnetism, and ferroelectricity. This research will focus on two major topics: (a) Materials/structure optimization of CaCu3Ti4O12/LiNbO3 (CCTO/LNO-Dielectric/Ferroelectric) based Voltage Controlled Capacitors (varicaps) and (b) deposition of ferroelectrics on III-V semiconductors or compound semiconductor based devices. Varicaps are electronic components with a capacitance that is tunable using a DC bias signal. The DC tunable dielectric constant of ferroelectric materials makes them a potential candidate for varicap applications. The frequency-dependent dielectric constant is a drawback for ferroelectric varicaps. This research investigates the frequency dependence of ferroelectric-based varicaps in combination with a large dielectric constant capacitor through the optimization of film deposition process and/or structures. Integration of ferroelectric oxide materials with high mobility III-V semiconductors is an attractive research topic albeit challenging due to the dissimilarity of the systems. The deposition and characterization of Pb(ZrxTi1-x)O3 (PZT) ferroelectrics on GaAs substrates is addressed in this research. The issue of gallium and arsenic diffusion and their reaction with lead atoms is mitigated using a buffer layer and employing a novel modified pulsed laser deposition technique to deposit the PZT films directly on GaAs/STO substrate.
dc.description.departmentPhysics
dc.formatText
dc.format.extent146 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationGatabi, J. R. (2016). <i>Oxides on semiconductors for novel device applications</i> (Unpublished dissertation). Texas State University, San Marcos, Texas.
dc.identifier.urihttps://hdl.handle.net/10877/7746
dc.language.isoen
dc.subjectFerroelectric
dc.subjectPulsed laser deposition
dc.titleOxides on Semiconductors for Novel Device Applications
dc.typeDissertation
thesis.degree.departmentPhysics
thesis.degree.disciplineMaterials Science, Engineering, and Commercialization
thesis.degree.grantorTexas State University
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy

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