Electrical and Optical Properties of RRAM
dc.contributor.advisor | Geerts, Wilhelmus | |
dc.contributor.author | Cui, Yubo | |
dc.contributor.committeeMember | Smith, Casey | |
dc.contributor.committeeMember | Zakhidov, Alexander | |
dc.date.accessioned | 2016-11-07T21:52:18Z | |
dc.date.available | 2016-11-07T21:52:18Z | |
dc.date.issued | 2016-08 | |
dc.description.abstract | Recently several electronic devices have achieved significant enhancements that have been attributed to an oxidized NiFe layer. A study on lateral spin valves, was found to have an increased magnetoresistance after leaving it exposed to air. The enhancements were attributed to the partly oxidation of a NiFe layer [1]. Even more recently the turn on voltages of Hematite based water splitting devices was lowered to record low of .61 V with the addition of an amorphous NiFeOx layer [1]. We investigated the optical properties of NixFe1-x-oxide thin films that were deposited by reactive RF sputtering on different substrates. Deposition was performed in an AJA Magnetron System using a gas flow of 10 sccm and a sputter pressure of 10-3 Torr. NixFe1-xOxide films were made for different substrate temperatures (room temperature-588 degrees Celsius), different deposition times (38-1200s), and different Oxygen flow rates (5-20%). Films with two different Fe concentrations were studied (10-19 at.%). The optical properties of the films from the UV to the far IR were studied by ellipsometer as a function of the deposition parameters. The electrical properties were studied by the linear four-point probe technique. Chemical composition, morphology and roughness were studied by EDAX, SEM, and AFM. In addition, three real RRAM memory cell device test wafers were made. | |
dc.description.department | Physics | |
dc.format | Text | |
dc.format.extent | 187 pages | |
dc.format.medium | 1 file (.pdf) | |
dc.identifier.citation | Cui, Y. (2016). <i>Electrical and optical properties of RRAM</i> (Unpublished thesis). Texas State University, San Marcos, Texas. | |
dc.identifier.uri | https://hdl.handle.net/10877/6342 | |
dc.language.iso | en | |
dc.subject | PyO | |
dc.subject | RRAM | |
dc.subject | Electrical and optical properties | |
dc.subject.lcsh | Nonvolatile random-access memory | en_US |
dc.subject.lcsh | Thin films--Design and construction | en_US |
dc.subject.lcsh | Nanostructured materials | en_US |
dc.subject.lcsh | Nanoscience | en_US |
dc.title | Electrical and Optical Properties of RRAM | |
dc.type | Thesis | |
thesis.degree.department | Physics | |
thesis.degree.discipline | Materials Physics | |
thesis.degree.grantor | Texas State University | |
thesis.degree.level | Masters | |
thesis.degree.name | Master of Science |
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