Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys
| dc.contributor.author | Stephenson, Chad A. | |
| dc.contributor.author | Gillett-Kunnath, Miriam | |
| dc.contributor.author | O'Brien, William A. | |
| dc.contributor.author | Kudrawiec, Robert | |
| dc.contributor.author | Wistey, Mark A. | |
| dc.date.accessioned | 2019-04-09T19:45:04Z | |
| dc.date.available | 2019-04-09T19:45:04Z | |
| dc.date.issued | 2016-12-02 | |
| dc.description | This article belongs to the Special Issue Current and Future Directions in Crystal Growth by Molecular Beam Epitaxy. | |
| dc.description.abstract | Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germyl)methane, or (H3Ge)4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE). Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE. | |
| dc.description.department | Physics | |
| dc.format | Text | |
| dc.format.extent | 15 pages | |
| dc.format.medium | 1 file (.pdf) | |
| dc.identifier.citation | Stephenson, C. A., Gillett-Kunnath, M., O’Brien, W. A., Kudrawiec, R. & Wistey, M. A. (2016). Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys. Crystals, 6, 159. | |
| dc.identifier.doi | https://doi.org/10.3390/cryst6120159 | |
| dc.identifier.uri | https://hdl.handle.net/10877/7968 | |
| dc.language.iso | en | |
| dc.publisher | Multidisciplinary Digital Publishing Institute | |
| dc.rights.holder | © 2016 The Authors. | |
| dc.rights.license | This work is licensed under a Creative Commons Attribution 4.0 International License. | |
| dc.source | Crystals, 2016, Vol. 6, No. 159. | |
| dc.subject | germanium | |
| dc.subject | germanium carbide | |
| dc.subject | molecular beam epitaxy | |
| dc.subject | Physics | |
| dc.title | Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys | |
| dc.type | Article |