Ultraviolet Micro-Raman Spectroscopy Stress Mapping of a 75-mm GaN-on-Diamond Wafer

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dc.contributor.authorHancock, Bobby Logan
dc.contributor.authorNazari, Mohammad
dc.contributor.authorAnderson, J.
dc.contributor.authorPiner, Edwin L.
dc.contributor.authorFaili, F.
dc.contributor.authorOh, S.
dc.contributor.authorTwitchen, D.
dc.contributor.authorGraham, S.
dc.contributor.authorHoltz, Mark
dc.date.accessioned2019-04-11T19:42:55Z
dc.date.available2019-04-11T19:42:55Z
dc.date.issued2016-05-23
dc.description.abstractFull-wafer stress mapping is accomplished using visible and ultraviolet (UV) micro-Raman spectroscopy of a 730-nm thick GaN layer integrated with diamond grown by chemical vapor deposition. The UV measurements taken from both sides of the wafer reveal a higher tensile stress of 0.86 ± 0.07 GPa at the free GaN surface compared to 0.23 ± 0.06 GPa from the GaN/diamond interface, each with good cross-wafer uniformity. Factors influencing the overall stress and stress gradient are understood based on relaxation from dislocations in the GaN which vary in density along the growth direction. Simulations incorporating a model for stress relaxation in the GaN elastic modulus adequately describe the observed dependence.
dc.description.departmentPhysics
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationHancock, B. L., Nazari, M., Anderson, J., Piner, E., Faili, F., Oh, S., Twitchen, D., Graham, S. & Holtz, M. (2016). Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer. Applied Physics Letters, 108(3), 211901.
dc.identifier.doihttp://dx.doi.org/10.1063/1.4952596
dc.identifier.urihttps://hdl.handle.net/10877/7978
dc.language.isoen
dc.publisherAIP Publishing
dc.sourceApplied Physics Letters, 2016, Vol. 108, Issue 21.
dc.subjectultraviolet micro-raman spectroscopy
dc.subjectdiamond
dc.subjectchemical vapor deposition
dc.subjectPhysics
dc.titleUltraviolet Micro-Raman Spectroscopy Stress Mapping of a 75-mm GaN-on-Diamond Wafer
dc.typeArticle

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