Growth and Characterization of β-Ga2O3 Thin Films by Molecular Beam Epitaxy for Deep-UV Photodetectors

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dc.contributor.authorGhose, Susmita
dc.contributor.authorRahman, Shafiqur
dc.contributor.authorHong, Liang
dc.contributor.authorRojas-Ramirez, Juan S.
dc.contributor.authorJin, Hanbyul
dc.contributor.authorPark, Kibog
dc.contributor.authorKlie, Robert
dc.contributor.authorDroopad, Ravi
dc.date.accessioned2020-04-20T20:20:13Z
dc.date.available2020-04-20T20:20:13Z
dc.date.issued2017-09
dc.description.abstractThe growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (¯201) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.
dc.description.departmentEngineering
dc.formatText
dc.format.extent9 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationGhose, S., Rahman, S., Hong, L., Rojas-Ramirez, J. S., Jin, H., Park, K., Klie, R., & Droopad, R. (2017). Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors. Journal of Applied Physics, 122(9).
dc.identifier.doihttps://doi.org/10.1063/1.4985855
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/10877/9654
dc.language.isoen
dc.publisherAmerican Institute of Physics Publishing
dc.rights.holder© 2017 Author(s).
dc.sourceJournal of Applied Physics, 2017, Vol. 122, No. 9, pp. 1-8.
dc.subjectepitaxy
dc.subjectgallium
dc.subjectoxides
dc.subjectmolecular beam epitaxy
dc.subjectthin films
dc.subjectphotoelectron spectroscopy
dc.subjectIngram School of Engineering
dc.titleGrowth and Characterization of β-Ga2O3 Thin Films by Molecular Beam Epitaxy for Deep-UV Photodetectors
dc.typeArticle

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