Challenges of Contact Module Integration for GaN-based Devices in a Si-CMOS Environment

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dc.contributor.authorJohnson, Derek W.
dc.contributor.authorRavikirthi, Pradhyumna
dc.contributor.authorSuh, Jae Woo
dc.contributor.authorLee, Rinus T. P.
dc.contributor.authorHill, Richard J. W.
dc.contributor.authorWong, Man Hoi
dc.contributor.authorPiner, Edwin L.
dc.contributor.authorHarris, Harlan Rusty
dc.date.accessioned2019-04-11T17:45:02Z
dc.date.available2019-04-11T17:45:02Z
dc.date.issued2014-05-23
dc.description.abstractThe authors report on the integration of an Au-free contact module intended for AlGaN/GaN high-electron-mobility transistors fabricated in a 200 mm Si complementary metal–oxide–semiconductor facility. Contacts are characterized via transfer line method structures, tunneling electron microscopy, and energy-dispersive x-ray spectroscopy. Factors leading to incorrect extraction of contact resistance are discussed. The authors find that reoptimization of chemical vapor deposited silicon nitride on AlGaN/GaN substrates is required to ensure reliable determination of contact resistance, gate-to-source spacing, and gate-to-drain spacing. Additional process development is required to enable parallel processing of Si and GaN devices.
dc.description.departmentPhysics
dc.formatText
dc.format.extent4 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationJohnson, D. W., Ravikirthi, P., Suh, J. W., Lee, R. T. P., Hill, R. J. W., Wong, M. H., Piner, E. L. & Harris, H. R. (2014). Challenges of contact module integration for GaN-based devices in a Si-CMOS environment. Journal of Vacuum Science & Technology B, 32(3), 030606.
dc.identifier.doihttps://doi.org/10.1116/1.4874801
dc.identifier.urihttps://hdl.handle.net/10877/7975
dc.language.isoen
dc.publisherAIP Publishing
dc.sourceJournal of Vacuum Science & Technology B, 2014, Vol. 32, No. 3.
dc.subjectsemiconductors
dc.subjectcontact module integration
dc.subjectGaN-based devices
dc.subjectSi devices
dc.subjectoptical computing
dc.subjectPhysics
dc.titleChallenges of Contact Module Integration for GaN-based Devices in a Si-CMOS Environment
dc.typeArticle

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