All Inkjet-Printed High On/Off Ratio Two-Dimensional Materials Field Effect Transistor
dc.contributor.advisor | Chen, Maggie Yihong | |
dc.contributor.author | Jewel, Mohi Uddin | |
dc.contributor.committeeMember | Droopad, Ravi | |
dc.contributor.committeeMember | Yu, Qingkai | |
dc.date.accessioned | 2022-01-10T22:20:19Z | |
dc.date.available | 2022-01-10T22:20:19Z | |
dc.date.issued | 2018-08 | |
dc.description.abstract | This thesis introduces the development of a novel ink, design, fabrication, and characterization of an all inkjet printed high current on/off ratio field effect transistor (FET). The inks were obtained through the liquid phase exfoliation of nitrogen-doped graphene (NDG), and molybdenum disulfide (MoS<sub>2</sub>) nanosheets into appropriate solvents. A stable and efficient method of inkjet printing is developed for NDG nanosheets. The concentration of nanosheets and the presence of MoS<sub>2</sub> were determined from UV-Vis spectra of the inks. The morphology of percolation clusters using NDG was studied using the thickness profile and scanning electron microscopy (SEM) images. The solvent-induced defects in NDG nanosheets were characterized by Raman spectroscopy. There were little or no solvent-induced defects in the nanosheets recovered by curing after printing. Barium titanate (BaTiO<sub>3</sub>) was prepared and used as a high <i>k (~20.5)</i> dielectric for the printed transistors. The NDG transistors were designed, fabricated, and characterized on the glass substrate. Due to the low on/off ratio of NDG transistors, NDG thin films were electrochemically doped with MoS<sub>2</sub> by multiple printing passes. The incorporation of semiconducting MoS<sub>2</sub> into NDG was confirmed by energy dispersive spectroscopy (EDS) for further analysis. A transistor with high current on/off ratio was obtained by NDG-MoS<sub>2</sub> heterostructures channel. To our best knowledge, this is the highest on/off ratio for a fully inkjet printed transistor based on 2D materials. | |
dc.description.department | Engineering | |
dc.format | Text | |
dc.format.extent | 65 pages | |
dc.format.medium | 1 file (.pdf) | |
dc.identifier.citation | Jewel, M. U. (2018). <i>All inkjet-printed high on/off ratio two-dimensional materials field effect transistor</i> (Unpublished thesis). Texas State University, San Marcos, Texas. | |
dc.identifier.uri | https://hdl.handle.net/10877/15126 | |
dc.language.iso | en | |
dc.subject | Fully printed | |
dc.subject | Doped graphene | |
dc.subject | Molybdenum disulfide | |
dc.subject | Transistor | |
dc.subject | Current on/off ratio | |
dc.subject | Switch | |
dc.subject | Inkjet printing | |
dc.title | All Inkjet-Printed High On/Off Ratio Two-Dimensional Materials Field Effect Transistor | |
dc.type | Thesis | |
thesis.degree.department | Engineering | |
thesis.degree.discipline | Engineering | |
thesis.degree.grantor | Texas State University | |
thesis.degree.level | Masters | |
thesis.degree.name | Master of Science |