Optical Studies of the Effect of Oxidation on GaN

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dc.contributor.authorKaraoglan-Bebek, Gulten
dc.contributor.authorWoo, Jung Hwan
dc.contributor.authorNikishin, Sergey
dc.contributor.authorHarris, Harlan Rusty
dc.contributor.authorHoltz, Mark
dc.date.accessioned2019-05-20T20:23:33Z
dc.date.available2019-05-20T20:23:33Z
dc.date.issued2014-01-09
dc.description.abstractOptical studies are reported of GaN following oxide layer growth using thermal oxidation and atomic layer deposition (ALD). The low-temperature photoluminescence (PL) probes the topmost GaN layer (<100 nm) where any influence from the oxide is expected. Thermal oxidation results in a 6 meV blue shift of the main PL band (3.478 eV) that is attributed to stress due to formation of GaON/b-Ga2O3 upon the GaN surface. A weak PL feature at 3.38 eV is due to diffusion of oxygen into the GaN. The Al2O3 deposited by ALD does not result in the 3.38 eV band following deposition and subsequent annealing. In contrast, HfO2 deposited by ALD results in sub-band gap features, which strengthen upon annealing. No appreciable stress is observed for either oxide deposited using ALD, which are not expected to produce GaON/b-Ga2O3 layer.
dc.description.departmentPhysics
dc.formatText
dc.format.extent4 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationKaraoglan-Bebek, G., Woo, J. H., Nikishin, S., Harris, H. R., & Holtz, M. (2014). Optical studies of the effect of oxidation on GaN. Journal of Vacuum Science & Technology B, 32(1).
dc.identifier.doihttp://dx.doi.org/10.1116/1.4858467
dc.identifier.urihttps://hdl.handle.net/10877/8203
dc.language.isoen
dc.publisherAmerican Vacuum Society
dc.sourceJournal of Vacuum Science & Technology B, 2014, Vol. 32, Issue 1.
dc.subjectthermal oxidation
dc.subjectatomic layer deposition
dc.subjectmetal oxides
dc.subjectlaser physics
dc.subjectOptical studies
dc.subjectmetal oxides
dc.subjectchemical elements
dc.subjectPhysics
dc.titleOptical Studies of the Effect of Oxidation on GaN
dc.typeArticle

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