Athermal Annealing of Silicon

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dc.contributor.authorGrun, J.
dc.contributor.authorManka, C. K.
dc.contributor.authorHoffman, Carl A.
dc.contributor.authorMeyer, J. R.
dc.contributor.authorGlembocki, O. J.
dc.contributor.authorKaplan, R.
dc.contributor.authorQadri, S. B.
dc.contributor.authorSkelton, E F.
dc.contributor.authorDonnelly, David W.
dc.contributor.authorCovington, Billy C.
dc.date.accessioned2010-06-02T10:21:02Z
dc.date.available2012-02-24T10:20:47Z
dc.date.issued1997-02-24
dc.description.abstractWe demonstrate a new mechanism for annealing silicon that does not involve the direct application of heat as in conventional thermal annealing or pulsed laser annealing. A laser pulse focused to high power on a small surface spot of a neutron-transmutation-doped silicon slab is shown to anneal regions <i>far outside</i> the illuminated spot where no heat was directly deposited. Electrical activation of donors throughout the slab was uniform and comparable to that of thermally annealed control samples. We conjecture that the annealing was caused by mechanical energy introduced by the laser pulse. This new method may provide a viable alternative for annealing semiconductors or other materials.
dc.description.departmentPhysics
dc.formatText
dc.format.extent4 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationGrun, J., Manka, C. K., Hoffman, C. A., Meyer, J. R., Glembocki, O. J., Kaplan, R., Qadri, S. B., Skelton, E. F., Donnelly, D., & Covington, B. (1997). Athermal annealing of silicon. <i>Physical Review Letters, 78</i>(8), pp. 1584-1587.
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.78.1584
dc.identifier.urihttps://hdl.handle.net/10877/4030
dc.language.isoen
dc.publisherAmerican Physical Society
dc.sourcePhysical Review Letters, 1997, Vol. 78, No. 8, pp. 1584-1587.
dc.subjectsilicon
dc.subjectannealing silicon
dc.subjectAlternative annealing techniques
dc.subjectPhysics
dc.titleAthermal Annealing of Silicon
dc.typeArticle

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