Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering

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dc.contributor.advisorGeerts, Wimhelmus J.
dc.contributor.authorTalbert, James Nicholas
dc.contributor.committeeMemberScolfaro, Luisa M.
dc.contributor.committeeMemberZakhidov, Alexander
dc.date.accessioned2019-12-05T14:54:16Z
dc.date.available2019-12-05T14:54:16Z
dc.date.issued2019-12
dc.description.abstractThe electrical properties of Radio Frequency Sputtered NiFeO and NiO films deposited on n and p-type Silicon was investigated for two different oxygen flows. Rectifying properties for Ni0.8Fe0.2Oα on n-Si showed Iforward/Ireverse >10,000 for α>1 and Iforward/Ireverse >50 for α<1. Both types of devices have opposite forward biases. Resistive switching was found for low oxygen samples but not for high oxygen flow samples. Results suggest that NiFeO sputtered at high oxygen flow is p-type. For NiO and NiFeO on p-Si no strong rectifying properties were observed. The specific contact resistivity of Pt/Ni0.9Fe0.1Oα (α>1) was estimated from the difference between the 2pp and 4pp resistance (0.0007 ± 0.0003 Ω cm2). The carrier concentration and mobility for high oxygen flow samples were calculated using the perpendicular resistivity and transition voltage between Ohmic and V 2 behavior and were 5.73 × 1017 cm-3 and 8.6 × 10-4 cm2 /Vs. This mobility does not tell which charge carrier is dominating. Through CV analysis the acceptor mobility was calculated to be approximately 8 × 10-3 cm2 /Vs. The acceptor concentration for NiFeO was approximated to be 8 × 1016 cm-3 through CV analysis.
dc.description.departmentPhysics
dc.formatText
dc.format.extent134 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationTalbert, J. N. (2019). <i>Electrical characterization of nickel oxide and nickel iron oxide thin films and resistive random access memory devices grown by radio frequency sputtering</i> (Unpublished thesis). Texas State University, San Marcos, Texas.
dc.identifier.urihttps://hdl.handle.net/10877/9011
dc.language.isoen
dc.subjectResistive random access memory
dc.subjectNiFeO
dc.subjectNiO
dc.subjectElectrical characterization
dc.subject.lcshSemiconductor storage devices
dc.subject.lcshNanoelectronics
dc.subject.lcshThin films
dc.titleElectrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering
dc.typeThesis
thesis.degree.departmentPhysics
thesis.degree.disciplinePhysics
thesis.degree.grantorTexas State University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science

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