Factors Influencing Photoluminescence and Photocarrier Lifetime in CdSeTe/CdMgTe Double Heterostructures
dc.contributor.author | Swartz, Craig H. | |
dc.contributor.author | Zaunbrecher, K. N. | |
dc.contributor.author | Sohal, Sandeep | |
dc.contributor.author | LeBlanc, E. G. | |
dc.contributor.author | Edirisooriya, Madhavie | |
dc.contributor.author | Ogedengbe, Olanrewaju S. | |
dc.contributor.author | Petersen, John E. | |
dc.contributor.author | Jayathilaka, Pathiraja A. R. D. | |
dc.contributor.author | Myers, Thomas H. | |
dc.contributor.author | Holtz, Mark | |
dc.contributor.author | Barnes, T. M. | |
dc.date.accessioned | 2019-05-20T21:38:52Z | |
dc.date.available | 2019-05-20T21:38:52Z | |
dc.date.issued | 2016-10-28 | |
dc.description.abstract | CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 10 16cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination. | |
dc.description.department | Physics | |
dc.format | Text | |
dc.format.extent | 7 pages | |
dc.format.medium | 1 file (.pdf) | |
dc.identifier.citation | Swartz, C. H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., & Barnes, T. M. (2016). Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. Journal of Applied Physics, 120(16). | |
dc.identifier.doi | https://doi.org/10.1063/1.4966574 | |
dc.identifier.uri | https://hdl.handle.net/10877/8207 | |
dc.language.iso | en | |
dc.publisher | American Institute of Physics | |
dc.source | Journal of Applied Physics, 2016, Vol. 120, No. 16. | |
dc.subject | photoluminescence | |
dc.subject | ohmic contacts | |
dc.subject | neutron cross section | |
dc.subject | chemical elements | |
dc.subject | photocarrier | |
dc.subject | Physics | |
dc.title | Factors Influencing Photoluminescence and Photocarrier Lifetime in CdSeTe/CdMgTe Double Heterostructures | |
dc.type | Article |
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