Near-Ultraviolet Micro-Raman Study of Diamond Grown on GaN
Date
2016-01-19
Authors
Nazari, Mohammad
Hancock, Bobby Logan
Anderson, J.
Savage, A.
Piner, Edwin L.
Graham, S.
Faili, F.
Oh, S.
Francis, D.
Twitchen, D.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
Ultraviolet (UV) micro-Raman measurements are reported of diamond grown on GaN using chemical vapor deposition. UV excitation permits simultaneous investigation of the diamond (D) and disordered carbon (DC) comprising the polycrystalline layer. From line scans of a cross-section along the diamond growth direction, the DC component of the diamond layer is found to be highest near the GaN-on-diamond interface and diminish with characteristic length scale of ∼3.5 μm. Transmission electron microscopy (TEM) of the diamond near the interface confirms the presence of DC. Combined micro-Raman and TEM are used to develop an optical method for estimating the DC volume fraction.
Description
Keywords
Diamond, polycrystalline material, raman spectroscopy, chemical elements, Physics
Citation
Nazari, M., Hancock, B. L., Anderson, J., Savage, A., Piner, E. L., Graham, S., Faili, F., Oh, S., Francis, D., Twitchen, D. & Holtz, M. (2016). Near-ultraviolet micro-Raman study of diamond grown on GaN. Applied Physics Letters, 108(3), 031901.