Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects

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dc.contributor.authorTang, Kechao
dc.contributor.authorDroopad, Ravi
dc.contributor.authorMcIntyre, Paul C.
dc.date.accessioned2020-04-21T13:58:09Z
dc.date.available2020-04-21T13:58:09Z
dc.date.issued2018-01
dc.description.abstractWe study the reliability of Al2O3/InGaAs metal-oxide-semiconductor gate stacks by investigating the effect of bias temperature stress on the charge trap density at the Al2O3/InGaAs interface and in the bulk oxide. Under extended negative biasing at 100 °C, the gate stacks display a notable increase in the interface trap density (D it), but little change in the border trap density. This phenomenon is more prominent for samples exposed to a H2/N2 forming gas anneal (FGA) than for the as-deposited samples. Negative gate bias applied during 100 °C thermal stress negates the FGA-induced passivation of interface states and causes convergence of the D it of the post-FGA and as-deposited gate stacks with increasing biasing time. This appears to be caused by hydrogen depassivation of interface traps under bias temperature stress, which is further supported by an observed hydrogen isotope effect when comparing the rate of D it increase after annealing in hydrogenated versus deuterated forming gas. A N2 anneal control experiment also indicates that the stability of the interface trap density of post-FGA Al2O3/InGaAs gate stacks is more strongly influenced by the behavior of hydrogen at the interface than by the thermal treatment effect of the anneal.
dc.description.departmentEngineering
dc.formatText
dc.format.extent6 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationTang, K., Droopad, R., & McIntyre, P. C. (2018). Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects. Journal of Applied Physics, 123(2).
dc.identifier.doihttps://doi.org/10.1063/1.4994393
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/10877/9658
dc.language.isoen
dc.publisherAmerican Institute of Physics Publishing
dc.rights.holder© 2018 Author(s).
dc.sourceJournal of Applied Physics, 2018, Vol. 123, No. 2, Article 025708.
dc.subjectindium gallium arsenide
dc.subjectmetal oxide semiconductors
dc.subjectannealing of semiconductors
dc.subjectthermal stresses
dc.subjectheat treatment
dc.subjectIngram School of Engineering
dc.titleBias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects
dc.typeArticle

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