Reactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma

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dc.contributor.advisorGalloway, Heather
dc.contributor.authorMcDonald, James Steven
dc.contributor.committeeMemberGeerts, Wilhelmus
dc.contributor.committeeMemberMichalk, Victor
dc.date.accessioned2020-07-10T14:54:29Z
dc.date.available2020-07-10T14:54:29Z
dc.date.issued2006-05
dc.description.abstractIn this study we investigate the etching of the diffusion barrier between the silicon substrate and the 1ow-k dielectric material. We will use silicon carbide (SiC), silicon carbonitride (SiCN), and titanium nitride (TiN) as our diffusion layer. Using the RF plasma and the magnetron gun with 1,1,1,2 tetrafluoroethane and oxygen as the active gases, we will obtain a reliable and reproducible method for determining the maximum etch rate for the various materials. An etch is required in order for a proper ground contact with the substrate. Si and A1 selectivity will also be discussed. The etch process along with the aluminum mask are prepared using standard photolithography techniques, and reactive ion etching (RIE) parameters (pressure and power) will be discussed. RIE is chemistry-specific process that enables the selective etching of sample elements. Etch profiles were taken using a profilometer.
dc.description.departmentPhysics
dc.formatText
dc.format.extent59 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationMcDonald, J. S. (2006). Reactive plasma etching of silicon carbide, silicon carbonitride, and titanium nitride in a tetrafluoroethane/oxygen plasma (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.
dc.identifier.citationMcDonald, J. S. (2006). Reactive plasma etching of silicon carbide, silicon carbonitride, and titanium nitride in a tetrafluoroethane/oxygen plasma (Unpublished thesis). Texas State University-San Marcos, San Marcos, Texas.
dc.identifier.urihttps://hdl.handle.net/10877/12042
dc.language.isoen
dc.subjectplasma etching
dc.subjectdiffusion
dc.subjectsilicon carbonitride
dc.subjecttitanium nitride
dc.subjecttetrafluoroethane
dc.subjectoxygen plasma
dc.titleReactive Plasma Etching of Silicon Carbide, Silicon Carbonitride, and Titanium Nitride in a Tetrafluoroethane/Oxygen Plasma
dc.typeThesis
thesis.degree.departmentPhysics
thesis.degree.grantorTexas State University-San Marcos
thesis.degree.levelMasters
thesis.degree.nameMaster of Science

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