Surface Treatments to Reduce Leakage Current in In0.53Ga0.47As p-i-n Diodes

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dc.contributor.authorGaur, Abhinav
dc.contributor.authorManwaring, Ian
dc.contributor.authorFilmer, Matthew J.
dc.contributor.authorThomas, Paul M.
dc.contributor.authorRommel, Sean L.
dc.contributor.authorBhatnagar, Kunal
dc.contributor.authorDroopad, Ravi
dc.date.accessioned2020-04-20T18:54:49Z
dc.date.available2020-04-20T18:54:49Z
dc.date.issued2015-03-18
dc.description.abstractThe impact of mesa surface conditions on the dark current of a homojunction In0.53Ga0.47 As p-i-n diode has been investigated. Three treatments were performed on mesa structures with a 100 nm i-layer-sidewall exposure to O2 plasma, sulfide treatment, and divinylsiloxane-bis-benzocyclobutene (BCB) passivation that resulted in perimeter normalized current, J1, of 0.01A/cm, 0.35lA/cm, and 35 μA/cm, respectively. This study spanned several days and it was shown that sulfide layer, unless properly capped, deteriorates over time whereas the BCB passivation properly encapsulates the mesa and does not degrade for longer periods of time.
dc.description.departmentEngineering
dc.formatText
dc.format.extent5 pages
dc.format.medium1 file (.pdf)
dc.identifier.citationGaur, A., Manwaring, I., Filmer, M. J., Thomas, P. M., Rommel, S. L., Bhatnagar, K., & Droopad, R. (2015). Surface treatments to reduce leakage current in In0.53Ga0.47As p-i-n diodes. Journal of Vacuum Science and Technology B, 33(2).
dc.identifier.doihttps://doi.org/10.1116/1.4914403
dc.identifier.issn2166-2746
dc.identifier.urihttps://hdl.handle.net/10877/9652
dc.language.isoen
dc.publisherAmerican Vacuum Society
dc.rights.holder© 2016 American Vacuum Society.
dc.sourceJournal of Vacuum Science and Technology: Part B-Nanotechnology and Microelectronics, March/April 2015, Vol. 33, No. 2.
dc.subjectPIN diodes
dc.subjectsurface preparation
dc.subjectstray currents
dc.subjectpassivation
dc.subjectmetal oxide semiconductor field-effect transistors
dc.subjectbenzocyclobutene
dc.subjectIngram School of Engineering
dc.titleSurface Treatments to Reduce Leakage Current in In0.53Ga0.47As p-i-n Diodes
dc.typeArticle

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