Radiative and Interfacial Recombination in CdTe Heterostructures
dc.contributor.author | Swartz, Craig H. | |
dc.contributor.author | Edirisooriya, Madhavie | |
dc.contributor.author | LeBlanc, E. G. | |
dc.contributor.author | Noriega, O. C. | |
dc.contributor.author | Jayathilaka, Pathiraja A. R. D. | |
dc.contributor.author | Ogedengbe, Olanrewaju S. | |
dc.contributor.author | Hancock, Bobby L. | |
dc.contributor.author | Holtz, Mark | |
dc.contributor.author | Myers, Thomas H. | |
dc.contributor.author | Zaunbrecher, K. N. | |
dc.date.accessioned | 2019-05-20T20:45:23Z | |
dc.date.available | 2019-05-20T20:45:23Z | |
dc.date.issued | 2014-12-02 | |
dc.description.abstract | Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non- radiative recombination rates by examining the dependence of photoluminescence (PL) on both ex-citation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10 10 cm-2 and carrier life- times as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10 -10 cm3s-1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate. | |
dc.description.department | Physics | |
dc.format | Text | |
dc.format.extent | 4 pages | |
dc.format.medium | 1 file (.pdf) | |
dc.identifier.citation | Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, H., & Zaunbrecher, K. N. (2014). Radiative and interfacial recombination in CdTe heterostructures. Applied Physics Letters, 105(22). | |
dc.identifier.doi | https://doi.org/10.1063/1.4902926 | |
dc.identifier.uri | https://hdl.handle.net/10877/8204 | |
dc.language.iso | en | |
dc.publisher | American Institute of Physics | |
dc.source | Applied Physics Letters, 2014, Vol. 105, Issue 22. | |
dc.subject | double heterostructures | |
dc.subject | laser theory | |
dc.subject | heterostructures | |
dc.subject | semiconductors | |
dc.subject | chemical compounds | |
dc.subject | optical metrology | |
dc.subject | leptons | |
dc.subject | Physics | |
dc.title | Radiative and Interfacial Recombination in CdTe Heterostructures | |
dc.type | Article |
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